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TSMC takes platform performance to the next level of density and power
with the introduction of its 45nm process technology. The TSMC 45nm
process combines the most advanced 193nm immersion photolithography,
performance-enhancing silicon strains, and extreme low-k (ELK) inter-metal
dielectric material to bring both performance and reliability to advanced
technology designs.
The 45nm Process Family
The 45nm logic family includes the Low Power (LP), General Purpose
Superb (GS) and low-power triple gate oxide (LGP) process options.
All three processes offer multiple threshold voltage (Vt) core devices
and 1.8V, 2.5V, 3.3V I/O options to meet different product requirements.
The 45nm LP process provides double gate density of 65nm with significantly
lower power and manufacturing costs per die making it ideal for
small footprint designs like those used in cell phones, portable
media players, PDAs and other handheld devices.
The 45nm GS processes provide more than twice the density, same
leakage, and more than 40 percent speed enhancement to the counterpart
TSMC 65nm process, and are targeted for PC, networking and wired
communication applications.

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