The 0.13-micron technology comes with logic process, mixed-signal/RF and embedded memory (6T SRAM, eDRAM, emFlash, OTP, eFuse), making the technology ideal for a variety of system-on-chip (SOC) applications. The 0.13-micron logic family includes the general purpose (G), low power (LP) and high performance low voltage (LV) process options. Each process supports multiple Vt options, including standard Vt, low Vt and high Vt.

TSMC has multiple fabs to support 0.13-micron volume production, making it the only foundry capable of fulfilling surge demands during market upswings. Both 8-inch and 12-inch process lines are available with sufficient capacity. TSMC has shipped more than four million 8-inch equivalent wafers to hundreds of customers since the technology was introduced in 2000.

An extensive array of libraries and IP from TSMC as well as from industry leading library vendors, have been silicon verified and volume proven in the 0.13-micron technology. Please refer to Design Services for full details.

TSMC offered a 0.11-micron process in 2003, and has shipped close to one million 8-inch equivalent wafers ever since. Half node technologies have proven to be effective in providing a cost competitive solution while maintaining similar levels of device performance as the full node. As a migration path from 0.18-micron or 0.16-micron, the 0.11-micron process has been as popular as the 0.13-micron process. Mixed signal and RF is fully supported in the 0.11-micron G process.