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TSMC Silicon Germanium BiCMOS technology delivers higher performance, faster time-to-market, lower power consumption, more competitive manufacturing costs and superior manufacturing reliability than Gallium Arsenide technology or other similar processes.
For example, Silicon Germanium BiCMOS technology includes deep trench for bipolar device isolation, multiple Ft bipolar devices, deep N-well, multiple Vt devices, precision MiM capacitors, precision high poly resistors, thick-metal inductors, high-quality varactors and diodes.CMOS devices are compatible with the TSMC standard logic platform.Power amplifier applications are added to the 0.18um SiGe technology platform to enable the integration of a power amplifier and RF transceiver front-end for WLAN applications.
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技術專區
