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TSMC Reference Flow 7.0
 
Reference Flow 7.0 Provides Extensive Design Solutions for 65 Nanometer Technology

A year ago, Reference Flow 6.0 opens door to 65nm design. Now TSMC comes back with Reference Flow 7.0 to provide you with extensive solutions to the 65nm design challenges. The new Reference Flow includes major enhancements in the areas of power management and design for manufacturing to reduce power consumption and maximize yield. In addition, statistical timing analysis is introduced for the first time, enabling designers to optimize the design margin and yield through accurately analyzing process variation impact on timing.
Power Management

Building upon the many power management technologies in the previous Reference Flows, Reference Flow 7.0 provides designers with more powerful features to drive down power consumption in 65nm.

Dynamic power reduction improvements include an enhanced voltage island implementation and multi-corner timing closure helping customers to analyze the impact that voltage scaling has on timing and to achieve timing closure.

Leakage power is addressed through a much-anticipated coarse-grained power gating technique, which helps designers achieve the leakage reductions of up to two orders to magnitude.

An important element of any complete power management methodology is the integration of libraries and design methodologies. Starting from Reference Flow 4.0, TSMC provides a set of specially designed libraries with multiple threshold voltages to work with a unique design methodology. For Reference Flow 7.0, TSMC provides a new level shifter cell for voltage scaling, providing substantial area saving. In addition, an optimized coarse-grained switching cell is designed to prevent electromigration, minimize voltage drop, and ensure fast wake-up time.

Design for Manufacturing (DFM)
Reference Flow 7.0 follows the tradition of the previous generations by offering key DFM features that designers can exercise in the middle of the design cycle, rather than post processing after tapeout. The integrated analysis and optimization capabilities enable designers to capture potential DFM issues early and make needed changes accordingly.

Critical area analysis (CAA) is introduced to identify the hot spot of random manufacturing defects caused by either conducting or non-conducting particles, and to further drive corrective actions of wire spreading and wire widening. Virtual Chemical Mechanical Polishing (VCMP) analysis identifies the metal and dielectric thickness variation hot spot, and guides dummy metal insertion to improve thickness uniformity throughout the chip.

Statistical Timing Analysis
At the 65-nanometer technology node, process variation plays a more critical role when it comes to timing closure, and the traditional corner model is no longer sufficient for performance critical design. Statistical timing enables customers to optimize design margin and yield through analyzing process variance impact on timing. TSMC becomes the first in the industry to offer statistical timing total solution in 65nm with Reference Flow 7.0 covering statistical SPICE model, library and IP characterization, standard cell design kits, EDA tool enhancement and the corresponding design methodology.
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Need further information about TSMC Reference Flow? Please log in to TSMC-OnlineSM, and click on "Reference Flow" under the Design Portal category.

Please contact Andrew Wu (email address: andrew_wu@tsmc.com ) should you have questions, suggestions, and comments.

 
Reference Flow 5.0 Press Release
Reference Flow Release 6.0
Reference Flow Release 4.0