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TSMC takes platform performance to the next level of density and
power with the introduction of its 40nm process technology.
The TSMC 40nm process combines the most advanced 193nm immersion
photolithography, performance-enhancing silicon strains, and
extreme low-k (ELK) inter-metal dielectric material to bring
both performance and reliability to advanced technology designs.
40nm Status from Mark Liu, TSMC Senior VP of Advanced Technology Business:
Customer product 40nm yields doubled over the past 3 months and we're
working hard to achieve even better results. Fab12 June-to-July'09
40nm output jumped 50% from 6,000 to 9,000 wafers per month. The 40nm
output will exceed 20,000 wafers by December of 2009.
The 40nm Process Family
The 40nm logic family includes the Low Power (LP), General Purpose
Superb (GS) and low-power triple gate oxide (LPG) process options.
All three processes offer multiple threshold voltage (Vt) core devices
and 1.8V, 2.5V, 3.3V I/O options to meet different product requirements.
The 40nm LP process provides double gate density of 65nm with significantly
lower power and manufacturing costs per die making it ideal for small footprint
designs like those used in cell phones, portable media players, PDAs and other
handheld devices.
The 40nm G processes provide more than twice the density, same leakage,
and more than 40 percent speed enhancement to the counterpart TSMC 65nm
process, and are targeted for PC, networking and wired communication
applications.

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