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TSMC's 10nm Fin Field-Effect Transistor (FinFET) process provides the most competitive combination of performance, power, area, and delivery parameters. The Company began accepting customer tape-outs for its 10nm FinFET process in the first quarter of 2016.

With a more aggressive geometric shrinkage, this process offers 2X logic density than its 16nm predecessor, along with ~15% faster speed and ~35% less power consumption. This process continues leveraging the revolutionary FinFET advantages to help customers achieve best density and power efficiency.

TSMC's 10nm FinFET supports various market segments, including server, graphic processor, mobile, and networking.


TSMC Chairman Dr. Morris Chang Honored by Forbes Magazine as One of the World’s 100 Greatest Living Business Minds(2017/09/21)
   
Xilinx, Arm, Cadence, and TSMC Announce World’s First CCIX Silicon Demonstration Vehicle in 7nm Process Technology(2017/09/11)
   
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