Home > Dedicated IC Foundry > Technology > Logic Technology > 10nm Technology
10nm Technology    
Technology
Future R&D Plans
Logic Technology
5nm Technology
7nm Technology
10nm Technology
16/12nm Technology
20nm Technology
28nm Technology
40nm Technology
65nm Technology
90nm Technology
0.13-micron Technology
0.18-micron Technology
3-micron Technology
Specialty Technology
Manufacturing
Services
Open Innovation Platform®
Grand Alliance
TSMC’s 10nm Fin Field-Effect Transistor (FinFET) process provides the most competitive combination of performance, power, area, and delivery parameters. The Company began accepting customer tape-outs for its 10nm FinFET process in the first quarter of 2016, and started high-volume shipments in early 2017, successfully supported major customers’ new mobile product launches.

With a more aggressive geometric shrinkage, this process offers 2X logic density than its 16nm predecessor, along with ~15% faster speed and ~35% less power consumption. This process continues leveraging the revolutionary FinFET advantages to help customers achieve best density and power efficiency.

TSMC’s 10nm FinFET supports various market segments, including application processors, cellular baseband and ASIC designs.


TSMC Recognizes Outstanding Suppliers at Supply Chain Management Forum(2018/12/06)
   
TSMC Board of Directors Meeting Resolutions(2018/11/13)
   
Media Contacts

Open Innovation Platform®
Tech Symposiums, Trade Shows, Industry Events & Investor Meetings
TSMC Value Chain Aggregator
Business Contacts
Document Center
TSMC-Onlinenew window
Online information and transaction for our customers.

The web-based portal for smarter supplier interactions.
Find more information about TSMC.
Open Innovation Platform® Home     Contact Us     Site Map     FAQ     Legal Notice & Trademark Information     Privacy & Cookies Policy
Copyright© Taiwan Semiconductor Manufacturing Company Limited 2010-2018, All Rights Reserved.