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TSMC's 7nm Fin Field-Effect Transistor (FinFET) process technology provides the industry's most competitive logic density and sets the industry pace for 7nm process technology development by delivering 256Mb SRAM with double-digit yields in June 2016. Risk production started in April 2017.

We expect double digit customer product tape-out in 2017.

Compared to its 10nm FinFET process, TSMC's 7nm FinFET features 1.6X logic density, ~20% speed improvement, and ~40% power reduction. TSMC set another industry record by launching two separate 7nm FinFET tracks: one optimized for mobile applications, the other for high performance computing applications.


TSMC Reports Third Quarter EPS of NT$3.47(2017/10/19)
   
TSMC Senior Vice President Dr. Stephen Tso to Retire(2017/10/16)
   
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