CMOS Image Sensor

TSMC provides foundry's most comprehensive CMOS Image Sensor process technology portfolio, featuring superior resolution, faster speed, and lower power consumption.

TSMC's CMOS Image Sensor technology ranges from 0.5-micron (µm) to 28nm nodes and supports a variety of applications, including PC cameras, digital cameras and recorders, digital TVs, toys, security systems, video cameras and other portable devices.

In 2018, TSMC had several achievements in CMOS image sensor technology including: (1) mass-production of new-generation sensors of sub-micron pixel for mobile application; (2) successful development of Ge-on-Si sensor for 3D range sensing applications with performance superior to Si sensor; (3) successful application of wafer stack technology to prototype Single Photon Avalanche Diode (SPAD) sensor array technology for 3D time-of-flight applications.