Industry 1st high density 2D/3D Fan Out Wafer-Level-Packaging, InFO_PoP leverages high density RDL and fine pitch TIV technologies to integrate mobile AP into a compact 3D system for cost and performances. It features thinner profile, cooler thermal, and improved PI/SI for smartphone application since no organic substrate and C4 bumps. InFO_PoP continues to grow packaging density and performances to fulfill customer needs on 5G/AI applications.
High compute power needs wider data bandwidth. Yet memory data bandwidth is often limited by memory package I/O and TIV pitch. MUST offers an alternative 3D system for bandwidth improvement with AP/BB directly stacking on top of memory chips through high density RDL and fine pitch TIV. Since there is no organic substrate and solder balls from memory package, wiring length is shorter from memory to AP/BB, MUST offers much thinner profile and improved PI/SI.
For 5G wireless communication, InFO_AiP (InFO with antenna in Package) Integrates dipole and patch antenna with mmWave FEM chip leveraging high density RDL and fine pitch TIV. Proprietary low-Dk dielectric material and uniform RDL enable high gain and low loss. Qualified 12mm x 12mm x 0.9mm package with 2 RDLs.