MoSys Successfully Ports 1T-SRAM Memories to TSMC 0.18-Micron Standard Logic Process; Ultra-Dense Embedded 1T-SRAM Available to Meet Needs of Foundry Customers

SUNNYVALE, Calif.--(BUSINESS WIRE)--Jan. 31, 2000--MoSys, Inc. announced today that it has successfully ported and silicon-verified its advanced 1T-SRAM embedded memory technology in TSMC's 0.18-micron standard logic process and design rules. This milestone was achieved less than six months after announcing the successful silicon demonstration of its 1T-SRAM technology in TSMC's 0.25-micron standard logic process. MoSys has laid out a very aggressive 1T-SRAM technology roadmap with development work already advanced on 0.15-micron standard logic processes.

"Embedded memory is the most pervasive silicon intellectual property (SIP) block on our customers designs and has the largest economic and performance impact," commented Roger Fisher, TSMC's senior director, strategic marketing. " We are very encouraged by this progress in making 1T-SRAM technology available to our customers on our standard 0.18-micron logic process." With MoSys' 1T-SRAM memories foundry customers can integrate multi-megabit blocks of high performance, high-density memory into their SoCs. 1T-SRAM macros are immediately available for integration in TSMC's 0.25- and 0.18-micron standard logic processes.

"TSMC continues to enable the fabless semiconductor market with its leading-edge foundry products and services" noted Mark-Eric Jones, vice president and general manager of intellectual property at MoSys, Inc. "The 1T-SRAM silicon validation data provides additional assurance for its worldwide semiconductor and system customers."

About 1T-SRAM

Available in densities up to 128Mbits, MoSys' patented 1T-SRAM technology uses a single transistor cell to achieve its exceptional density while maintaining the refresh-free interface and low latency random memory access cycle time associated with traditional six-transistor SRAM cells. Embedded 1T-SRAM allows designers to get beyond the density limits of six-transistor SRAMs; it also reduces much of the circuit complexity and extra cost associated with using embedded DRAM. 1T-SRAM memories can be fabricated in either pure logic or embedded memory processes using as little as one ninth of the area of traditional six-transistor SRAM cores. In addition to the exceptional performance and density, this technology offers dramatic power consumption savings by using under a quarter of the power of traditional SRAM memories. 1T-SRAM technology is volume production proven in millions of MoSys' discrete memory devices.

About MoSys

MoSys, Inc. is the leading semiconductor technology company specializing in innovative, high performance, random access memories based on its patented 1T-SRAM architecture. Founded in 1991, the company develops innovative memory technology for licensing to semiconductor and systems companies. MoSys also uses this technology to produce its own memory products. The company's unique memory architecture has been proven in the volume production of over 30 million memory devices. Licensees that are adopting 1T-SRAM technology include tier one electronics, semiconductor and foundry companies. The company is headquartered at 1020 Stewart Drive, Sunnyvale, California, 94086. More information on MoSys is available at http://www.mosys.com.

Note for Editors: 1T-SRAM is a trademark of MoSys, Inc. All other trademarks or registered trademarks are the property of their respective owners.