SUNNYVALE, Calif.,March 1, 1999-MoSys, Inc. and Taiwan Semiconductor Manufacturing Company Ltd. today announced that they have entered into an agreement to offer TSMC's customer-owned tooling (COT) customers access to MoSys' high-performance, high-density embedded 1T-SRAM technology.
TSMC is first foundry to offer COT customers access to ultra-dense SRAM technology
MoSys' patented 1T-SRAM technology offers SRAM performance at DRAM density
Under the terms of this agreement the companies will cooperate to port, market and distribute the 1T-SRAM technology for customers of TSMC's pure logic and embedded DRAM processes.
"This agreement provides TSMC customers with early access to this ultra-dense SRAM technology,'' said Roger Fisher, senior director of strategic marketing, TSMC, USA. ``We believe that 1T-SRAM will be an important technology for our customers' next-generation high-integration system-chip products."
"MoSys has already manufactured high volumes of 1T-SRAM-based discrete memories at TSMC, the world's largest dedicated foundry,'' said Mark-Eric Jones, vice president and general manager of intellectual property at MoSys, Inc. "We are pleased to be extending our relationship with TSMC to give their COT customers access to our high-performance, high-density embedded memory technology."
Available in densities up to 128Mbits, 1T-SRAM technology uses a single-transistor cell to achieve its exceptional density while maintaining the refresh-free interface and low latency random memory access cycle time associated with normal six-transistor SRAM cells. 1T-SRAM memories can be fabricated using either pure logic or embedded memory processes without violating standard design rules, and using as little as one ninth of the area of normal six-transistor SRAM cores. In addition, this technology offers dramatic power consumption savings using a quarter of the power of conventional SRAM designs.
MoSys 1T-SRAM cores, designed and verified in TSMC's 0.25-micron logic process, will be available for license from MoSys during the second quarter of 1999.
TSMC (ADS traded NYSE: TSM, also traded on TSE) is the world's largest dedicated integrated circuit (IC) foundry and offers a comprehensive set of IC fabrication processes, including processes to manufacture CMOS logic, mixed-mode, volatile and non-volatile memory and BiCMOS chips. Currently, TSMC operates two six-inch wafer fabs (Fab 1 and 2) and three eight-inch wafer fabs (Fab 3, 4, and 5) all located in Hsin-Chu, Taiwan.
In mid-1998, TSMC announced that production wafers were being delivered from its first U.S. foundry, WaferTech, a joint venture with Altera, Analog Devices and Integrated Silicon Solutions, Inc. The company has broken ground in the new Tainan Park, which will house Fabs 6 and 7 and recently announced its participation in a $1.2 billion joint venture fab with Philips Semiconductor which is scheduled to open in Singapore in 2000. TSMC's corporate headquarters are in Taiwan. More information about TSMC is available through the World Wide Web at http://www.tsmc.com.tw.
MoSys, Inc. is a semiconductor memory technology company that specializes in innovative, high-performance, random-access memories including products based on its patented 1T-SRAM technology. Founded in 1991, the Company develops and markets memory integrated circuits as well as licenses memory technology and cores to semiconductor and systems companies. The Company is headquartered at 1020 Stewart Drive, Sunnyvale, California 94086. More information on MoSys is available at http://www.mosys.com.