HSIN-CHU, Taiwan, December 12, 2000 - Taiwan Semiconductor Manufacturing Company (NYSE: TSM) and VIA Technologies, Inc. today announced the delivery of the foundry industry’s first 0.13-micron functioning wafers. At the same time, VIA Technologies, Inc., one of the world’s leading fabless semiconductor design houses, announced that the next generation of VIA Cyrix?processors will utilize this new industry-leading process.
The new VIA Cyrix?processors were developed using TSMC’s 0.13-micron CL013LV process, which features the foundry industry’s most advanced technology for high-performance, high-density designs. The process will significantly enhance both the performance and power efficiency of VIA Cyrix?/font> processor designs, according to VIA officials. TSMC’s complete 0.13-micron process technology family includes core (CL013G), low power (CL013LP) and high-performance (CL013LV) choices, all of which are available today.
“TSMC has invested a tremendous amount of resources in bringing our 0.13 micron process to market,” said Dr. FC Tseng, president of TSMC. “We are delighted that such a strategic customer as VIA will leverage the benefits of our world-leading technology for its next generation of processors, and are committed to providing them with the support necessary to rapidly bring their products to volume production.”
VIA has already received its 0.13-micron wafers and verified their functionality. The new VIA Cyrix?/font> processors are expected to meet the specific needs of the value PC, notebook and information appliance (IA) markets.
"TSMC has clearly demonstrated that it is ahead of the curve with its state-of-the-art process technology," said Wenchi Chen, President and CEO of VIA Technologies, Inc. "Through our close partnership with them, VIA will be the first company in the world to launch a CPU using an advanced 0.13 micron process onto the market.”
About TSMC’s 0.13 Micron Process
TSMC’s advanced 0.13-micron process delivers the foundry industry’s most advanced technology for high-performance, high-density system-on-chip (SOC) designs. The process features a complete technology family, including core, high-performance, ultra-high-speed and low-power offerings. It is ideal for ultra-high-performance CPU applications, as well as high-performance, high-bandwidth applications, wireless Bluetooth RF applications.
Built to TSMC’s industry-leading standards for quality and reliability, the 0.13-micron process provides a 72 percent shrink versus TSMC’s popular 0.18-micron technology, enabling more logic density per square millimeter for system-level integration with the highest possible performance. The process supports all TSMC technology offerings, including logic, embedded flash, and mixed signal technologies.
Primary features of the 0.13-micron process include a 1.0-volt core, 2.5 or 3.3-volt I/Os, a gate length of 0.08 micron, and a ring oscillator performance rating of 11 picoseconds delay for small ring oscillators at 1.2V and 14 picoseconds/gate at 1.0Vfor the CLO13LV (high-performance) process. The embedded 6T SRAM cell size is 2.43um2, representing a 52 percent shrink versus TSMC’s 0.18-micron process.
TSMC’s 0.13-micron process delivers industry-leading performance, density and reliability on the industry’s widest array of technology platforms for advanced system-on-chip design. These platforms include:
Core (CL013G): Easy migration, process integration platform for computing, communications, and high-density programmable logic High Performance (CL013LV): Low voltage, high performance. High interest from early adopters in performance-hungry applications such as microprocessors, graphics, networking, high-speed SRAM Low Power (CL013LP): Low power, excellent for p