Science-Based Industrial Park, Hsin-Chu, Taiwan, August 9, 2001 — Taiwan Semiconductor Manufacturing Company Ltd. (TSMC or the "Company") (NYSE: TSM) and Celestry Design Technologies, Inc., a leading provider of Silicon Accurate Sign-off? technology for the semiconductor and electronics industry, announced today that they have reached the first milestone in their collaborative development effort to deliver a new Hot-Carrier effect verification capability for 0.18 micron and below technology.
The development effort combines TSMC's 0.18 micron HCI (Hot-Carrier Injection) model library with software from Celestry, resulted in a 500 percent improvement on the accuracy for identifying and analyzing hot-carrier effects for digital, mixed-signal and analog designs. TSMC and Celestry are also developing 0.13-micron hot-carrier model libraries, which will be available in the fourth quarter of this year.
Following a rigorous qualification process, the TSMC 0.18-micron technology hot-carrier model libraries were validated for use with Celestry's RelXpert? reliability simulator. TSMC used Celestry's DeltaMOS? device model and Celestry's RelPro+? parameter extractor to generate the hot-carrier parameters and RelXpert to assess the hot-carrier impact on 0.18-micron designs and third-party libraries.
"At geometries of 0.18 micron and below, designers encounter hot-carrier effects that impact circuit performance. Minimizing hot-carrier effects has and will continue to be an important issue," said Dr. John Yue, TSMC Vice President of Quality and Reliability at TSMC.
"The engineering efforts of Celestry and TSMC have enhanced Celestry's hot-carrier analysis software," added Dr. Yue, "offering designers a powerful tool for digital, mixed-signal and analog designs, particularly those using overdrive voltages. It also gives designers a higher level of assurance in the performance and reliability of their designs."
"This milestone furthers our commitment to deliver nanometer SoC design. Our collaboration with TSMC enables designers to enhance the performance of their designs without risking quality," said Dr. Zhihong Liu, president and CEO of Celestry. "TSMC's use of our DeltaMOS HCI model and RelXpert reliability simulation software, combined with TSMC's HCI process libraries, means customers can confidently migrate designs to 0.18 micron technology and below."
About Hot-Carrier Induced Degradation
Hot-Carrier Injection (HCI) degradation slows down circuit speeds that can potentially cause circuit operating failures. HCI arises as a result of the aggressive scaling of device geometries, most notably device channel lengths. Shorter channel lengths mean higher circuit speeds, but they also increase electric fields in the channel. These fields can damage the gate oxide interface, resulting in degradation in device performance. The amount of device degradation is not constant for each device, but is upon the device's unique switching activity within each circuit. In the past designers had no means of uncovering such specific information.
About Celestry Hot-Carrier Products
RelXpert (formerly called BTABERT?) is the industry standard SPICE level hot-carrier simulator. It can precisely simulate circuit performance change due to device hot-carrier degradation, thus ensuring robust and high performance designs on 0.18-micron technologies and below. Designers are able to simultaneously evaluate the trade-offs between higher performance and reduced design margins. In the end, the best possible combination of speed and immunity to adverse hot-carrier effects can be achieved. Through the implementation of hot-carrier simulation strategies, designers can develop more aggressive and higher-performance products by using RelXpert.