Science-Based Industrial Park, Hsinchu, Taiwan, March 7, 2001 -- Taiwan Semiconductor Manufacturing Company (NYSE: TSM), the world’s leading semiconductor foundry, has announced the industry’s first 0.13 μm mixed-signal production process. Among the first devices produced using this process is the recently-announced BroadcomR BCM5404 Quad Gigabit Copper Transceiver. This product emerged from an intensive joint development effort that resulted in a product tape-out in January 2001, and “right-the-first-time” delivery of fully functional silicon in February.
The Broadcom device was one of the first to utilize TSMC’s 0.13 μm process to employ mixed-signal modules. As such, the Broadcom device represents an acceleration of TSMC’s roadmap for delivery of mixed-signal features by two full quarters.
The Broadcom BCM 5404 Quad Gigabit Copper Transceiver is the first Gigabit Copper Transceiver to utilize a 0.13 μm, all-layer copper process. It was produced exactly three months after TSMC announced delivery of the foundry industry’s first 0.13 μm CMOS logic products.
By using the most advanced mixed-signal technology available on the market, Broadcom has been able to claim a leadership position in the Quad Gigabit Ethernet Transceiver market. The new device facilitates deployment of Gigabit Ethernet bandwidth to the desktop by doubling port density, lowering system cost, and slashing power dissipation to under 1.0 watt/port.
Broadcom’s new Quad Gigabit Transceiver enables system designers to create cost-effective, power-efficient 24-port and 48-port Gigabit Ethernet switches and routers with the same footprint as their Fast Ethernet predecessors. This enables an easy migration from Fast Ethernet (100 million bits/sec) to Gigiabit Ethernet (1 billion bits/sec) systems.
About TSMC’s 0.13 μm Process
TSMC has clearly staked out manufacturing leadership at the 0.13 μm node. The company expects to have as many as 40 customer designs using the 0.13 μm process by June of this year. Currently, 12 designs are either in production or delivered at this process geometry. Two products are in pilot production and four additional products have been fully customer-verified in silicon. In addition, many more designs will be verified on the 0.13 μm process using TSMC’s CyberShuttle mult-project wafer service.
TSMC’s advanced 0.13 μm process features a complete technology family, including core, high-performance, ultra-high-speed and low-power offerings. The 0.13 μm technology platform supports logic, embedded SRAM, embedded flash, and mixed signal/RF technologies for system-on-chip (SoC) applications. The process features copper interconnects and Low-K dielectrics for reduced interconnect delay.
About TSMC’s 0.13 μm Mixed-Signal/RF Process
TSMC’s 0.13 μm mixed-signal/RF process represents an aggressive advancement in the company’s industry-leading mixed signal/RF roadmap. These processes are fully compatible with TSMC’s industry-leading 0.13 μm logic process. Mixed-signal modules based on logic process are now available. Fully featured mixed-signal/RF process to be offered later this year will include precision capacitors and resistors for high-performance mixed-signal functions; and high-quality inductors, varactors, and diodes for RF functions. The optimized process will have an NMOS fT much higher than 80 GHz, which is very attractive in high frequency Mixed Signal and RF designs.
TSMC is the world's largest dedicated semiconductor foundry, providing the industry’s leading process technology, library and IP options and other leading-edge foundry services. TSMC operates two six-inch wafer fabs and six eight-inch wafer fabs. The Company also has substantial capacity commitments at two joint ventures fabs (Vangua