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TSMC’s 10nm Fin Field-Effect Transistor (FinFET) process provides the most competitive combination of performance, power, area, and delivery parameters. The Company began accepting customer tape-outs for its 10nm FinFET process in the first quarter of 2016, and started high-volume shipments in early 2017, successfully supported major customers’ new mobile product launches.

With a more aggressive geometric shrinkage, this process offers 2X logic density than its 16nm predecessor, along with ~15% faster speed and ~35% less power consumption. This process continues leveraging the revolutionary FinFET advantages to help customers achieve best density and power efficiency.

TSMC’s 10nm FinFET supports various market segments, including application processors, cellular baseband and ASIC designs.

TSMC May 2019 Revenue Report(2019/06/10)
TSMC Research Highlighted at 2019 Symposia on VLSI Technology & Circuits(2019/06/06)
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