TSMC's 7nm Fin Field-Effect Transistor (FinFET) process technology provides the industry's most competitive logic density and sets the industry pace for 7nm process technology development by delivering 256Mb SRAM with double-digit yields in June 2016. Risk production started in April 2017, and we received more than forty customer product tape-outs in 2018. Now we expect to receive more than 100 additional product tape-outs in 2019. Our second generation 7nm (N7+) technology entered risk production in August 2018, and will be the industry's first commercially available EUV process technology.
Meanwhile, TSMC has announced 6-nanometer (N6) process in the second quarter of 2019, which provides a significant enhancement of its industry-leading N7 technology and offers customers a highly competitive performance-to-cost advantage as well as fast time-to-market with direct migration from N7-based designs. By leveraging the new capabilities in extreme ultraviolet (EUV) lithography gained from the N7+ technology currently in risk production, TSMC's N6 process delivers 18% higher logic density over the N7 process. At the same time, its design rules are fully compatible with TSMC's proven N7 technology, allowing its comprehensive design ecosystem to be reused. As a result, it offers a seamless migration path with a fast design cycle time with very limited engineering resources for customers to achieve the product benefits from the new technology offering.
Scheduled for risk production in the first quarter of 2020, TSMC's N6 technology provides customers with additional cost-effective benefits while extending the industry-leading power and performance from the 7nm family for a broad array of applications, ranging from high-to-mid end mobile, consumer applications, AI, networking, 5G infrastructure, GPU, and high-performance computing.
Compared to its 10nm FinFET process, TSMC's 7nm FinFET features 1.6X logic density, ~20% speed improvement, and ~40% power reduction. TSMC set another industry record by launching two separate 7nm FinFET tracks: one optimized for mobile applications, the other for high performance computing applications.