TSMC provides the industry's most comprehensive embedded non-volatile memory (eNVM) technologies, offering faster speeds, smaller bitcells, and low power to give customers a stronger competitive edge. Spanning 0.5μm to 6nm and 5nm, our solutions cover mainstream OTP, MTP, Flash, and next-generation MRAM and RRAM. Supported by a complete eNVM IP portfolio, these technologies are widely used in automotive, consumer electronics, HPC, smart home, IoT, and wearables, driving a smart, connected world.

To meet advanced process demands for high performance and low power, TSMC continues to advance New eNVM. Our embedded MRAM (eMRAM) offers ultra-high-speed read/write, high endurance, solder reflow support, and excellent high-temperature data retention. The 22nm and 16nm eMRAM has passed AEC-Q100 automotive qualification and are in production, while 12nm automotive-grade and 5nm ultra high write-speed eMRAM are under development for automotive, data center, telecom, and edge AI applications.

As an excellent alternative to embedded Flash (eFlash), TSMC's embedded RRAM (eRRAM) is in high volume production at 40nm, 28nm, 22nm, and 12nm. The second-generation 22nm ultra-low leakage technology is automotive-qualified, and the cost-effective, reliable third-generation N12e® technology is in commercial volume production. Additionally, 6nm eRRAM development is underway to further power edge AI and smart silicon for various applications.