TSMC’s industry-leading Resistive Random Access Memory (RRAM) CMOS process provides good scalability, power reduction and logic migration. The non-volatile memory RRAM cell, formed between backend metal layers, is an excellent eFlash replacement for general micro-controlling units (MCUs) and Internet of Things (IoT) applications to support firmware, data storage, and security memory.

TSMC’s 40RRAM and 22RRAM, with optimized power and form factor are moving into production. A 12RRAM is under development for next-generation AIoT products.