TSMC’s industry-leading resistive random-access memory (RRAM) CMOS process provides good scalability, power reduction, and logic migration. The non-volatile memory RRAM cell, formed between backend metal layers, is an excellent eFlash replacement for general microcontroller units (MCUs) and Internet of Things (IoT) applications that support firmware, data storage, and security memory.

TSMC’s 40RRAM and 22RRAM, which provide optimized power and form factor, are in production. 12RRAM solution, featuring a balance of cost and performance, entered consumer-grade risk production in 2024.