Comprehensive Ultra-low Power Technology Platform

22ULL/ULP
N12e™

TSMC’s 22nm ultra-low leakage (22ULL) technology is a comprehensive portfolio for low-power system-on-a-chip (SoC) design. It includes a low operating voltage (low Vdd) solution, enhanced analog features, and Non-Volatile Memory (NVM)/Bipolar-CMOS-DMOS (BCD) integration.

The 22ULL technology offers both a ULL device and ULL Static Random Access Memory (SRAM) with low single digit Id_off, and retention current to extend battery life. An innovative power-gating design reduces leakage. 22ULL also supports improved flicker noise and mismatch for better analog design.

Excellent process control and an advanced sign-off flow enable lower Vdd, which is important to many IoT applications, and especially critical in battery-powered devices.

TSMC’s N12e process is an industry-leading, ultra-low power (ULP) technology for Internet of Things (IoT) and edge artificial intelligence (AI) processor applications.
N12e is a derivative from 12nm FinFET compact plus (12FFC+), that leverages the 12FFC+ process baseline and IP ecosystem.
N12e offers ultra-low leakage SRAMs (ULL_SRAM & CLL_SRAM), ultra-low leakage devices (eHVT & cHVT), and low leakage IO device (LL_GPIO) to enable ultra-low leakage designs.
N12e’s low V_dd solutions include low V_dd STD cell libraries and low V_dd SRAM compilers that meet next-generation IoT low dynamic power requirements.