Comprehensive Ultra-low Power Technology Platform

N6e^®
N12e^®
22ULL/ULP

TSMC’s N6e^® is an industry-leading Ultra-Low Power (ULP) technology for Internet of Things (IoT) and edge artificial intelligence (AI) processor applications.
N6e^® ULP technology, built on the TSMC N6 One-Platform, offers a low operating voltage (low Vdd) logic standard cell library, low Vdd SRAM, ultra-low leakage devices (eHVT), and ultra-low leakage SRAMs (ULL_SRAM/eLL_SRAM). The results are ultra-low power Artificial Intelligence of Things (AIoT) innovations with optimized power and performance. N6e^® started production in 2024.

The N12e^® technology is a 12nm FinFET Compact Plus (12FFC+) derivative that leverages the 12FFC+ process baseline and IP ecosystem.
N12e^® offers ultra-low leakage SRAMs (ULL_SRAM and CLL_SRAM), ultra-low leakage devices (eHVT and cHVT), and low leakage IO device (LL_GPIO) to enable ultra-low leakage designs.
N12e^®’s low Vdd solutions include low Vdd STD cell libraries and low Vdd SRAM compilers that meet next-generation IoT low dynamic power requirements.

TSMC’s 22nm Ultra-Low Leakage (22ULL) technology is a comprehensive low-power system-on-a-chip (SoC) portfolio. It includes a low operating voltage (low Vdd) solution, enhanced analog features, and non-volatile memory (NVM)/Bipolar-CMOS-DMOS (BCD) integration.

The 22ULL technology offers both a ULL device and ULL static random-access memory (SRAM) with low single digit Id_off and retention current to extend battery life. An innovative power-gating design reduces leakage. 22ULL also supports improved flicker noise and mismatch for better analog design.

Excellent process control and an advanced sign-off flow enable lower Vdd, which is important for many IoT applications and is especially critical in battery-powered devices.